High Level Alloy High Carbon Silicon

As the tempering temperature increases, the number of carbides gradually increases and their size also gradually enlarges. When the tempering temperature rises from 580°C to 620°C, the dynamic tensile (1400 s^(-1)) and compressive (3200 s^(-1)) strengths of high carbon silicon-manganese steel both show a decreasing trend, while the dynamic tensile plasticity increases. The concentration of Mises stress inside the carbides and the shear stress concentration at the micrometer-scale carbide/matrix interface are key factors in the nucleation of micropores during dynamic tensile of high carbon silicon-manganese steel. During the dynamic compression process, the plastic deformation of high carbon silicon-manganese steel is influenced by the coupling of strain hardening and thermal softening mechanisms, and exhibits significant strain rate sensitivity.

1.A high-temperature and high-pressure separation process and device for high carbon-silicon is provided, which heats polycrystalline silicon carbon feedstock to generate a layer of SiO2 on the surface of the carbon feedstock. Cold water is sprayed onto the surface of the polycrystalline silicon carbon feedstock, causing it to crack. An etching solution is then sprayed onto the surface of the polycrystalline silicon carbon feedstock. Deionized water is used to clean the separated polycrystalline silicon carbon feedstock, followed by the screening and separation of silicon and graphite. By heating the polycrystalline silicon carbon feedstock and then rapidly cooling it by spraying cold water, cracks are formed in the carbon feedstock, providing a convenient reaction pathway for the etching solution, allowing it to penetrate into the carbon feedstock more easily, thereby accelerating the reaction time. This greatly reduces the immersion time of the polycrystalline silicon carbon feedstock in the etching solution and improves the efficiency and effectiveness of the silicon-carbon separation.

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