High Level Metal Silicon Metal

The method for preparing samples by dissolving, evaporating, and then melting the residue with a solvent solves the problem of directly melting metal silicon for sample preparation. It allows for the simultaneous determination of various impurity elements in silicon metal, eliminates the influence of matrix effects, overcomes the limitations of standard samples on measurements, has a wide measurement range, and high accuracy. The sample preparation conditions were determined by arranging orthogonal experiments.

1.In order to reduce the difficulty of subsequent processes in the acid washing of silicon metal, a new wet oxidation technology is added to the mature room temperature acid washing technology for the purification of metallic silicon. The main function of acid washing is to remove most of the metallic impurities exposed on the surface of the metallic silicon particles; after wet oxidation, boron, which has a small condensation coefficient in the internal structure of the particles (in the silicon and silica system), diffuses into the silica at high temperatures, and then the oxide layer and the impurities contained in it are etching away. Experiments have shown that this method has a significant purifying effect on boron impurities, with the boron impurity content being as low as 4×10^-6 after purification. The two technologies are compatible in terms of process and complementary in purification goals, making it a very effective low-energy and low-cost purification method.

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