Silicon Carbide Media

100 Grit Silicon Carbide Description

Silicon carbide in the semiconductor in the existence of the main form is as a substrate material, based on its excellent characteristics, the use of silicon carbide substrate limit performance is better than the silicon substrate, silicon carbide substrate can meet the high temperature, high pressure, high frequency, high power and other conditions of the application needs, the current silicon carbide substrate has been applied to radio frequency devices and power devices.

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120 Grit Silicon Carbide Specification

120 Grit Silicon Carbide suppliers-ZhenAn International

1200 Grit Silicon Carbide Professional supplier-ZhenAn

180 Grit Silicon Carbide manufacturer-ZhenAn International

The advantages of silicon carbide devices are as follows:

(1) high-voltage resistance. The breakdown electric field strength is large, 10 times that of silicon, with silicon carbide devices can be prepared to greatly improve the voltage withstand capacity, operating frequency and current density, and greatly reduce the device conduction loss. So in the actual application process, compared with the silicon base can be designed into a smaller volume, about 1/10 of the silicon-based devices.

(2) High temperature resistance. Semiconductor devices at higher temperatures will produce intrinsic excitation of carriers, resulting in device failure. The larger the forbidden band width, the higher the limiting operating temperature of the device. The forbidden band of silicon carbide is close to three times that of silicon, which ensures the reliability of silicon carbide devices operating at high temperatures. The limiting operating temperature of silicon devices generally cannot exceed 300℃, while the limiting operating temperature of silicon carbide devices can reach more than 600℃. At the same time, the thermal conductivity of silicon carbide is higher than silicon, high thermal conductivity helps silicon carbide device heat dissipation, in the same output power to maintain a lower temperature, silicon carbide device is also therefore less demanding on the design of heat dissipation, which helps to achieve the miniaturisation of the device.

(3) Achieving high-frequency performance Silicon carbide saturation electron drift rate is large, two times that of silicon, which determines the silicon carbide device can achieve higher operating frequency and higher power density. At the same time, silicon carbide substrate material energy loss is smaller. At the same voltage and conversion frequency, at 400V, the energy loss of silicon carbide MOSFET inverter is about 29%-60% of the energy loss of silicon-based IGBT; at 800V, the energy loss of silicon carbide MOSFET inverter is about 30%-50% of the energy loss of silicon-based IGBT. Thus the energy loss of silicon carbide devices is much less.

180 Grit Silicon Carbide Powder Customer visit photos

FAQ

Q: Are you a manufacturer?

A: Yes, we are a manufacturer located in Anyang City, Henan Province.As a professional supplier of metallurgical raw materials, we always put product quality first. We use the most advanced equipment and technology from raw material control, manufacturing process and quality control system to ensure that our products meet industry standards and meet customer needs.

Q:Which kind of payment terms do you accept?

A: For small order,you can pay by T/T,Western Union or Paypal,nomal order by T/T or LC to our company account

Q:How can I get a sample of Silicon Carbide Media?

A: free samples is available,but freight charges will be at your account and the charges will be return to you or deduct from your order in the future.

Q: How to confirm the Product Quality before placing orders?

A:You can get free samples for some products,you only need to pay the shipping cost or arrange a courier to us and take the samples. You can send us your product specifications and requests,we will manufacture the products according to your requests.

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