Black Carborundum
Black Carborundum Description
In the next few years, the proportion of large-size silicon carbide epitaxial wafers will increase year by year. As 4-inch silicon carbide substrate and epitaxial technology has become increasingly mature, therefore, 4-inch silicon carbide epitaxial wafer there is no longer a shortage of supply, its future price reduction space is limited. In addition, although the current international advanced manufacturers have developed 8-inch silicon carbide substrate, but its entry into the silicon carbide power device manufacturing market will be a long process, with the gradual maturation of the 8-inch silicon carbide epitaxial technology, the future may appear 8-inch silicon carbide power device production line.
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Black Silicon Carbide Powder Specification
Black Silicon Carbide Powder suppliers-ZhenAn International
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Product |
Silicon carbide |
||
|
CAS No: |
409-21-2 |
||
|
Purity |
99%min |
Quantity: |
500.00kg |
|
Batch no. |
20120802 |
Size |
1um |
|
Date of manufacturing: |
Dec 08, 2020 |
Date of test: |
Dec. 08, 2020 |
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Test Item |
Specification |
Results |
|
|
SiC |
>99% |
>99% |
|
|
Fe2O3 |
<0.25% |
0.008% |
|
|
F.C |
<0.25% |
0.02% |
|
|
Ca |
<0.1% |
0.001% |
|
|
Mg |
<0.1% |
0.003% |
|
|
Cu |
<0.1% |
0.002% |
|
|
Hardness(mohs) |
9.15 |
confirmed |
|
|
Melting point(℃) |
2250 |
confirmed |
|
|
Maximum service temperature(℃) |
1900 |
confirmed |
|
Silicon Carbide 80 Grit manufacturer-ZhenAn International

60 90 Grit Silicon Carbide supplier-ZhenAn International

Silicon carbide epitaxy mainly solves two major problems: epitaxial wafer uniformity control and epitaxial defect control.
(1) Epitaxial wafer uniformity control, due to the increase in epitaxial wafer size is often accompanied by a decline in epitaxial wafer uniformity, so the control of uniformity of large-size epitaxial wafer is the key to improve the yield and reliability of the device, and then reduce costs.
(2) Epitaxial defect control. Base crystal plane dislocation (BPD) is an important crystalline defect that affects the stability of silicon carbide bipolar power devices, and the continuous reduction of BPD density is the main direction for the development of epitaxial growth technology. Due to the high BPD density of silicon carbide substrates prepared by physical weather transport (PVT), most of the BPDs in the epitaxial layer that are harmful to the device come from the penetration of BPDs in the substrate into the epitaxial layer. Therefore, improving the substrate crystallisation quality can effectively reduce the BPD dislocation density in the epitaxial layer.
1500 Grit Silicon Carbide Powder Customer visit photos

FAQ
Q: Are you a manufacturer?
A: Yes, we are a manufacturer located in Anyang City, Henan Province.As a professional supplier of metallurgical raw materials, we always put product quality first. We use the most advanced equipment and technology from raw material control, manufacturing process and quality control system to ensure that our products meet industry standards and meet customer needs.
Q:Which kind of payment terms do you accept?
A: For small order,you can pay by T/T,Western Union or Paypal,nomal order by T/T or LC to our company account
Q:How can I get a sample of Black Carborundum?
A: free samples is available,but freight charges will be at your account and the charges will be return to you or deduct from your order in the future.
Q: How to confirm the Product Quality before placing orders?
A:You can get free samples for some products,you only need to pay the shipping cost or arrange a courier to us and take the samples. You can send us your product specifications and requests,we will manufacture the products according to your requests.
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