Silicon Carbide Powder
SiC Powder Description
Silicon carbide powder is a silicon carbide feed source with low impurity content and uniform particle size required for the preparation of high-quality silicon carbide single crystals, especially in the preparation of high-purity semi-insulating silicon carbide or doped semi-insulating silicon carbide, which requires a very high level of low impurity content.
When the silicon carbide material source contains impurities, especially shallow energy level impurities (such as elemental nitrogen), it is very difficult to remove in the production process, so once the material source contains a large number of impurities, it is not possible to achieve the production of high-purity semi-insulating silicon carbide material source. In addition, the particle size uniformity of the synthesised powder is low, and the target particle size ratio of the silicon carbide powder is small.
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220 Grit Silicon Carbide Powder Specification
220 Grit Silicon Carbide Powder suppliers-ZhenAn International
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Silicon Carbide Powder
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Color
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SiC
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F.C
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Fe2O3
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Density g/cm³
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Black
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F4~F90/P12~P100
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≥98.6
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≤0.2
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≤0.4
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≥3.12
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F100~F150/P120~P150
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≤0.4
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≤0.25
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≤0.5
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≥3.12
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F180~F220/P180~P220
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≥97.2
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≤0.3
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≤0.55
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≥3.12
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F230~F280/P240~P360
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≥97.2
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≤0.3
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≤0.55
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≥3.12
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F320~F500/P400~P1000
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≥97.0
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≤0.35
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≤0.6
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≥3.10
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F600~F800/P1200~P1500
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≥96.5
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≤0.4
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≤0.6
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≥3.10
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F1000~F1200/P2000~2500
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≥95.5
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≤0.5
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≤0.7
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≥3.10
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Green
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F4~F90/P12~P100
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≥99.1
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≤0.2
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≤0.2
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≥3.18
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F100~F150/P120~P150
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≥98.6
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≤0.25
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≤0.45
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≥3.18
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F180~F220/P180~P220
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≥98.0
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≤0.25
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≤0.5
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≥3.18
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F230~F280/P240~P360
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≥98.0
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≤0.3
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≤0.5
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≥3.15
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F320~F500/P400~P1000
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≥97.5
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≤0.3
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≤0.5
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≥3.15
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F600~F800/P1200~P1500
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≥97.0
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≤0.35
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≤0.5
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≥3.15
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F1000~F1200/P2000~P2500
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≥96.5
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≤0.4
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≤0.5
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≥3.15
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180 Grit Silicon Carbide Powder supplier-ZhenAn
1200 Grit Silicon Carbide Powder supplier-ZhenAn International
A method for preparing a low-cost mass-producible high-purity silicon carbide powder, comprising the following steps:
Purifying the preparation device for preparing silicon nitride powder, the preparation raw material, and then mixing the carbon powder and silicon powder to obtain the mixed powder; placing the mixed powder in a crucible, and after washing the furnace with a mixture of argon and hydrogen, sintering is carried out under the condition of a mixture of argon and hydrogen to obtain the high-purity silicon carbide powder.
The silicon powder is purified by heat treatment, said heat treatment is as follows: the furnace pressure is controlled at 10 kpa to 80 kpa; wherein the flow rate of argon gas is 50 to 500 sccm and hydrogen gas is 50 to 500 sccm; and the temperature is increased from room temperature to 900°C at a rate of 2 to 10°C/min. Holding at 900°C, furnace pressure of 10kpa to 80kpa, argon gas of 50 to 500sccm, hydrogen gas of 0 to 500sccm for 10 to 80 hours; the carbon powder is purified by heat treatment, said heat treatment is as follows: maintaining furnace pressure of 10kpa to 80kpa, admitting argon gas of 100 to 600sccm and hydrogen gas of 10 to 300sccm, and raising temperature rate of 3 to 10 ℃ / min heating rate of the furnace temperature to 1200 ~ 1700 ℃, at this temperature to maintain 5 ~ 30 hours; then continue to raise the temperature, in 1900 ~ 2200 ℃ conditions, pressure 1 ~ 50kpa, argon 100 ~ 600sccm, hydrogen 10 ~ 300sccm conditions to maintain 10 ~ 60 hours; cooling down the temperature before the pressure is raised to 80 ~ 95kpa, through the argon 100 ~ 600sccm, hydrogen 100 ~ 500sccm, and then will be to 40 ~ 80 ℃; to be reduced to 40 ~ 80 ℃, open the furnace cavity of the reserved holes, add viscosity of 1 ~ 5cps of silicone oil, in the surface of the carbon powder particles to form a protective film. The molar ratio of carbon powder and silicon powder is (0.9 to 1.1):1; in the gas mixture of argon and hydrogen, the volume ratio of argon to hydrogen is 10:1 to 1:10.
Silicon carbide powder sintering method is: in 20kpa ~ 80kpa pressure conditions, pass into the hydrogen 50 ~ 300sccm, argon 400 ~ 1000sccm, the temperature will be raised to 1600 ~ 1800 ℃, for 4 ~ 20 hours; will reduce the pressure to 1kpa ~ 50kpa, pass into the hydrogen 20 ~ 200sccm, argon 200 ~ 600sccm The temperature is raised to 1900-2300°C for 10-50 hours. The sintered material obtained after sintering was crushed and graded to obtain high-purity silicon carbide powder.
1500 Grit Silicon Carbide Powder Customer visit photos
FAQ
Q :How do you treat quality complaint?
A:First of all, our quality control will reduce the quality problem to near zero. In case there is a real quality problem caused by us, we will send you free goods for replacement or refund your loss.
Q: Do you have quality control?
A: Yes, we have gained BV, SGS authentication.
Q: How long is your delivery time?
A: Generally it is 7-14 days if the goods are in stock. or it is 25-45 days if the goods are not in stock, it is according to quantity.
Q:Can we get the some samples of Silicon Carbide Powder?Any charges?
A: Yes , we could offer the sample for free charge but do not pay the cost of freight . If you place the order after confirm the sample , we will refund your express freight or deducte it from the order amount .
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