Coarse Silicon Carbide
Silicon Carbide 100 Grit
Silicon Carbide Products
36 Grit Silicon Carbide supplier

Coarse Silicon Carbide

Coarse Silicon Carbide is a compound semiconductor material composed of silicon (Si) and carbon (C). It has a very strong bond and is thermally, chemically and mechanically stable.

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Product Introduction

Silicon Carbide 100 Grit Description

The third-generation semiconductor high-power power electronic devices represented by SiC is one of the fastest growing power semiconductor devices in the field of power electronics.

Silicon carbide as a typical representative of the third generation of semiconductor materials, but also the most mature crystal production technology and device manufacturing level, one of the most widely used wide bandwidth semiconductor materials, has formed a global materials, devices and applications industry chain. It is an ideal semiconductor material for high-temperature, high-frequency, radiation-resistant and high-power applications.

Silicon Carbide Products Specification

Silicon Carbide Products suppliers-ZhenAn International

TYPICAL CHEMICAL ANALYSIS
SiC	99.05%
SiO2	0.20%
F,Si	0.03%
Fe2O3	0.10%
F.C	0.04%
TYPICAL PHISICAL PROPERTIES
Hardness:	Mohs:9.5
Melting Point:	Sublimes at 2600 ℃
Maximum service temperature:	1900℃
Specific Gravity:	3.2g/cm³
Bulk density(LPD):	1.2-1.6 g/cm3
Color:	Green
Particle shape:	Hexagonal

Silicon Carbide 100 Grit manufacturer-ZhenAn International

SiC Powder supplier-ZhenAn

Mechanical properties: high hardness (Kjeldahl hardness of 3000kg/mm²), can cut ruby; high wear resistance, second only to diamond.

Thermal properties: thermal conductivity exceeds that of metallic copper, 3 times that of Si and 8 to 10 times that of GaAs, good heat dissipation, very important for high power devices.

Chemical properties: corrosion resistance is very strong, at room temperature can resist almost any known corrosive agents. SiC surface easy oxidation to generate a thin layer of SiO2, can prevent its further oxidation, in higher than 1700 ℃, this layer of oxide film melting and rapid oxidation reaction. SiC can be dissolved in molten oxidising agent material.

Electrical properties: 4H-SiC and 6H-SiC band gap is about 3 times that of Si, 2 times that of GaAs; its breakdown electric field strength is one order of magnitude higher than that of Si, and the saturation electron drift rate is 2.5 times that of Si. 4H-SiC has a wider band gap than 6H-SiC.

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FAQ

Q: Is the price negotiable?

A: Yes, please feel free to contact us anytime if you have any questions. And for clients who want to enlarge the market, we will do our best to support them.

Q: Can you supply free samples?

A: Yes, we can provide free samples to customers for them to check the quality or do the chemical analyses, but please tell us the detailed requirements for us to prepare the right samples.

Q: When can you deliver the goods?

A: Usually,we can deliver the goods within 15-20 days after we receive the advanced payment or original L/C.

Q: Can you supply a test report issued by SGS or another third-party inspection?

A: Yes, we can, if customers request third-party test reports.

We sincerely hope to be your partner, we welcome new and old customers to visit the guide as well as various forms of trade cooperation talks!

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