High Level Material Silicon Carbide
Products Description
Using an appropriate amount of the dispersant tetramethylammonium hydroxide can increase the absolute value of the Zeta potential of silicon carbide particles by nearly 20 mV. Adjusting the slurry pH to around 11.9 can prepare a solid-phase volume fraction of up to 70% for the SiC concentrated suspension. In this concentrated suspension, a uniform and stable dispersion can be achieved between coarse and fine SiC particles, and the suspended particles do not exhibit noticeable sedimentation. Its rheological behavior conforms to the Quemada model.
Products parameters
| Color | Black |
| Hardness | 9.2 mohs |
| Grain shape | Angular |
| Melting Point | 2100 C min |
| True density | 3.20-3.25g/cm3 |
| Bulk density | 1.2-1.6g/cm3(depends on the size) |
Products cooperation picture

1.A formulation of a refractory material, particularly relating to a refractory material containing silicon carbide. A refractory material containing silicon carbide, where the formulation ratio by weight includes the following components: magnesium oxide, calcium oxide raw materials 45-52 parts, aluminosilicate fiber with a diameter of 2-4 μm and a length of ≤1 cm 1-2 parts, silicon carbide 8-15 parts, quartz sand 12-14 parts, magnesium zirconium alloy 0.2-6 parts, magnesium aluminum silicate 3-8 parts, and binder for carbon-containing refractory materials 2-5 parts. The prepared silicon carbide-containing refractory material balances oxidation resistance, high-temperature resistance, slag penetration resistance, thermal shock resistance, and ease of production.
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