One Of High Level Materials Silicon Metal
Products Description
Silicon Metal is an important raw material for producing organosilicon and electronic silicon, which requires refining to reduce impurities. The oxidation method is a relatively effective refining and impurity removal method. When using this method, selecting slag with suitable density, viscosity, liquid phase line temperature, and interfacial tension is key to ensuring the smooth progress of the refining reaction. Experiments were conducted on the removal of aluminum and calcium from metallurgical silicon using sodium calcium silicate glass as an oxidant. The removal rates of aluminum and calcium impurities in metallurgical silicon reached as high as 93.1% and 96.4%, respectively, with the contents of aluminum and calcium reduced to as low as 0.07% and 0.025%, achieving a very good refining effect.
Products parameters
| Garde | Composition | ||||
| Si Content (%) | Impurities (%) | ||||
| Fe | Al | Ca | P | ||
| Silicon Metal 1501 | 99.69 | 0.15 | 0.15 | 0.01 | ≤0.004% |
| Silicon Metal 1502 | 99.68 | 0.15 | 0.15 | 0.02 | ≤0.004% |
| Silicon Metal 1101 | 99.79 | 0.1 | 0.1 | 0.01 | ≤0.004% |
| Silicon Metal 2202 | 99.58 | 0.2 | 0.2 | 0.02 | ≤0.004% |
| Silicon Metal 2502 | 99.48 | 0.25 | 0.25 | 0.02 | ≤0.004% |
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1.Silicon Metal is widely used for contacts between the source, drain, gate, and metal electrodes in microelectronic devices, making it one of the key materials for the preparation of nano-integrated circuits. The phase composition, interfacial reactions, and formation mechanisms of functional metal silicides for semiconductor integrated circuits, as well as various preparation techniques such as thermal evaporation, ion implantation, sputter deposition, and molecular beam epitaxy are discussed. The material properties of TiSi2, CoSi2, and NiSi and their impact on the performance of integrated circuits at different technology nodes are examined. The relationship between annealing temperature and the crystal structure and lattice parameters of NiSi is analyzed. The growth process of rare earth metal silicides and their barrier and interfacial characteristics with silicon substrates are clarified. The performance evaluation of the aforementioned metal silicides, defect detection, and thermal stability testing methods are presented. Exploring new types of metal silicides for large-scale semiconductor integrated circuits at technology nodes of 32 nm and below has become a primary focus for future research.
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